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參數(shù)資料
| 型號(hào)： | 934002640235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | 934002640235 |
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1996 Aug 01
3
Philips Semiconductors
Product specication
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a ceramic substrate, 8 mm
× 10 mm × 0.7 mm.
2. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
12
V
ID
drain current
30
mA
±IG1
gate 1 current
10
mA
±IG2
gate 2 current
10
mA
Ptot
total power dissipation; BF998
up to Tamb =60 °C; see Fig.3; note 1
200
mW
up to Tamb =50 °C; see Fig.3; note 2
200
mW
Ptot
total power dissipation; BF998R up to Tamb =50 °C; see Fig.4; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
Fig.3 Power derating curves; BF998.
handbook, halfpage
0
100
0
200
100
200
(mW)
Ptot max
(2)
(1)
MLA198
Tamb ( C)
o
(1) Ceramic substrate.
(2) Printed-circuit board.
Fig.4 Power derating curve; BF998R.
handbook, halfpage
0
100
0
200
100
200
(mW)
Ptot max
MGA002
Tamb (°C)
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