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| 型號(hào)： | 934002260215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | 934002260215 |
September 1995
3
Philips Semiconductors
Product specication
NPN 1 GHz wideband transistor
BF747
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts =70 °C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =10V
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 10 V
40
95
250
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
0.8
1.2
1.6
GHz
Cre
feedback capacitance
IE =ie = 0; VCB =10V; f=1MHz
0.5
pF
GUM
maximum unilateral power gain;
note 1
IC = 15 mA; VCE = 10 V; f = 100 MHz
20
dB
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
-------------------------------------------------------------- dB
=
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MBB401
150
Ts (
oC)
Ptot
(mW)
VCE =10V.
Fig.3
DC current gain as a function of
collector current.
handbook, halfpage
140
60
100
MBB397
20
hFE
1
10 1
10 2
10
I
(mA)
C
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