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參數(shù)資料
| 型號(hào)： | 933982050135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | 933982050135 |
1999 Apr 14
2
Philips Semiconductors
Product specication
NPN Darlington transistor
PZTA14
FEATURES
High current (max. 500 mA)
Low voltage (max. 30 V).
APPLICATIONS
Pre-amplifiers requiring high input impedance.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complement: PZTA64.
PINNING
PIN
DESCRIPTION
1
base/input
2, 4
collector/output
3
emitter/ground
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
13
2
4
MAM319
TR2
2, 4
3
Top view
1
TR1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCES
collector-emitter voltage
VBE =0
30
V
VEBO
emitter-base voltage
open collector
10
V
IC
collector current (DC)
500
mA
ICM
peak collector current
800
mA
IB
base current (DC)
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.25
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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