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| 型號(hào)： | 933976380235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | 933976380235 |
2002 Mar 04
3
Philips Semiconductors
Product specication
Schottky barrier (double) diodes
BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
tp <10ms
600
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
230
mW
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
IR
reverse current
VR = 25 V; see Fig.4
2
A
trr
reverse recovery time
when switched from IF =10mA
to IR = 10 mA; RL = 100 ;
measured at IR = 1 mA;
see Fig.6
5ns
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.5
10
pF
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