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參數(shù)資料
| 型號： | 933975320115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, MPT3, SMD, UPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 933975320115 |
1999 Apr 08
2
Philips Semiconductors
Product specication
PNP medium power transistor
BC869
FEATURES
High current (max. 1 A)
Low voltage (max. 20 V).
APPLICATIONS
Low voltage, high current LF applications.
DESCRIPTION
PNP medium power transistor in a SOT89 plastic
package. NPN complement: BC868.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
123
Bottom view
MAM297
3
2
1
MARKING
TYPE NUMBER
MARKING CODE
BC869
CEC
BC869-16
CGC
BC869-25
CHC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
32
V
VCEO
collector-emitter voltage
open base
20
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
1A
ICM
peak collector current
2A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.35
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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