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參數(shù)資料
| 型號(hào)： | 933952210126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | 933952210126 |
1999 Apr 12
3
Philips Semiconductors
Product specication
PNP switching transistor
MPS3906
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp = 300 s; δ = 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
50
nA
IEBO
emitter cut-off current
IE = 0; VEB = 5V
50
nA
hFE
DC current gain
VCE = 1 V; note 1
IC = 0.1 mA
60
IC = 1mA
80
IC = 10 mA
100
300
IC = 50 mA
60
IC = 100 mA
30
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 1 mA; note 1
250
mV
IC = 50 mA; IB = 5 mA; note 1
400
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA; note 1
650
850
mV
IC = 50 mA; IB = 5 mA; note 1
950
mV
Cc
collector capacitance
IE =ie = 0; VCB = 5V;
100 kHz
≤ f ≤ 1 MHz
5pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V;
100 kHz
≤ f ≤ 1 MHz
15
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz
150
MHz
F
noise gure
IC = 100 A; VCE = 5 V; RS =1k;
f = 10 Hz to 15.7 kHz
4dB
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = 10 mA; IBon = 1 mA;
IBoff = 1 mA; VCC = 3 V; VBB = 1.9 V
100
ns
td
delay time
50
ns
tr
rise time
50
ns
toff
turn-off time
700
ns
ts
storage time
600
ns
tf
fall time
100
ns
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