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參數(shù)資料
| 型號(hào)： | 933947770235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | 933947770235 |
2001 Oct 12
3
Philips Semiconductors
Product specication
General purpose double diode
BAV23S
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 100 mA
1.0
V
IF = 200 mA
1.25
V
VF
forward voltage
series connection; see Fig.3
IF = 100 mA
2.0
V
IF = 200 mA
2.5
V
IR
reverse current
see Fig.5
VR = 200 V
100
nA
VR = 200 V; Tj = 150 °C
100
A
IR
reverse current
series connection
VR = 400 V
100
nA
VR = 400 V; Tj = 150 °C
100
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
5
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 ; measured
at IR = 3 mA; see Fig.7
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
360
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
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