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| 型號： | 933943950115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243 |
| 封裝： | PLASTIC, SMD, SC-62, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 933943950115 |
2002 May 22
5
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistor
BSS192
Fig.6 Output characteristics; typical values.
handbook, halfpage
0
(1)
(2)
(3)
(5)
25
1
0
VDS (V)
ID
(A)
0.2
0.4
0.6
0.8
5
10
15
20
MDA177
(4)
Tj =25 °C.
(1) VGS = 10 V.
(2) VGS = 6V.
(3) VGS = 5V.
(4) VGS = 4V.
(5) VGS = 3V.
Fig.7 Transfer characteristic; typical values.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
0
10
1
0
VGS (V)
ID
(A)
0.2
0.4
0.6
0.8
2
4
6
8
MDA178
Fig.8
Drain current as a function of drain-source
on-state resistance; typical values.
Tj =25 °C.
(1) VGS = 10 V.
(2) VGS = 5V.
(3) VGS = 4V.
handbook, halfpage
28
8
ID
(mA)
RDSon ()
12
16
20
24
103
102
10
MDA179
(2)
(3)
(1)
Fig.9
Temperature coefficient of gate-source
threshold voltage; typical values.
VGSth at ID = 1 mA.
k
V
GSth at Tj
V
GSth at 25 ° C
--------------------------------------
=
handbook, halfpage
50
0
50
150
1.2
0.7
k
1.1
100
1
0.9
0.8
MDA182
Tj (
oC)
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