參數(shù)資料
型號： 933939780112
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-4
文件頁數(shù)： 12/18頁
文件大?。?/td> 138K
代理商： 933939780112
September 1992
3
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF175
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
110
V
±VGS
gate-source voltage
20
V
ID
DC drain current
4A
Ptot
total power dissipation
up to Tmb = 25 °C
68
W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
THERMAL
RESISTANCE
Rth j-mb
thermal resistance from junction to mounting base
Tmb = 25 °C; Ptot = 68 W
2.6 K/W
Rth mb-h
thermal resistance from mounting base to heatsink
Tmb = 25 °C; Ptot = 68 W
0.3 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDS(on).
(2) Tmb = 25 °C.
handbook, halfpage
101
1
10
110
ID
(A)
VDS (V)
102
(1)
MRA905
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0
40
80
160
100
0
80
MGP063
120
60
40
20
Th (°C)
(2)
(1)
Ptot
(W)
相關(guān)PDF資料
PDF描述
0569960000 24 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK
933943940115 400 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243
933943950135 200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243
933943950115 200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243
933946340215 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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