參數(shù)資料
型號(hào)： 933939380115
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述： 0.2 A, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS, SMD, 2 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 48K
代理商： 933939380115
2000 May 25
2
Philips Semiconductors
Product specication
Schottky barrier diode
BAS86
FEATURES
Low forward voltage
High breakdown voltage
Guard ring protected
Hermetically-sealed small SMD
package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
handbook, halfpage
MAM190
ka
Cathode indicated by a grey band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
50
V
IF
continuous forward current
200
mA
IF(AV)
average forward current
see Fig.2
200
mA
IFRM
repetitive peak forward current
tp ≤ 1 sec.; δ≤ 0.5
500
mA
IFSM
non-repetitive peak forward current
tp =10ms
5A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
相關(guān)PDF資料
PDF描述
933947770215 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
933947770235 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
933947770185 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
933952400113 1500 V, SILICON, RECTIFIER DIODE
934034760112 1500 V, SILICON, RECTIFIER DIODE
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