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參數(shù)資料
| 型號： | 933932330215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 933932330215 |
1999 Apr 08
2
Philips Semiconductors
Product specication
PNP Darlington transistors
BCV26; BCV46
FEATURES
High current (max. 500 mA)
Low voltage (max. 60 V)
Very high DC current gain (min. 10000).
APPLICATIONS
Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BCV26
FD
BCV46
FE
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
1
3
2
MAM299
13
2
TR2
TR1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BCV26
40
V
BCV46
80
V
VCES
collector-emitter voltage
VBE =0
BCV26
30
V
BCV46
60
V
VEBO
emitter-base voltage
open collector
10
V
IC
collector current (DC)
500
mA
ICM
peak collector current
800
mA
IB
base current (DC)
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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