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參數(shù)資料
| 型號(hào)： | 933930100112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 933930100112 |
1997 Nov 07
2
Philips Semiconductors
Product specication
NPN 6.5 GHz wideband transistor
BFQ135
FEATURES
Optimum temperature profile and
excellent reliability properties
ensured by emitter-ballasting
resistors and application of gold
sandwich metallization.
APPLICATIONS
MATV and microwave amplifiers,
such as in aerial amplifiers, radar
systems, oscilloscopes, spectrum
analysers, etc.
DESCRIPTION
NPN wideband transistor in a 4-lead
dual-emitter SOT172A2 package with
a ceramic cap. All leads are isolated
from the mounting base.
PINNING
PIN
DESCRIPTION
1
collector
2, 4
emitter
3
base
Fig.1 SOT172A2.
fpage
MSA457
4
2
1
3
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
19
V
IC
collector current (DC)
150
mA
Ptot
total power dissipation
Tc ≤ 145 °C
2.7
W
hFE
DC current gain
IC = 120 mA; VCE = 18 V; Tamb =25 °C55
fT
transition frequency
IC = 120 mA; VCE = 18 V; f = 1 GHz;
Tamb =25 °C
6.5
GHz
GUM
maximum unilateral power gain IC = 120 mA ;VCE = 18 V; f = 500 MHz;
Tamb =25 °C
17
dB
IC = 120 mA; VCE = 18 V; f = 800 MHz;
Tamb =25 °C
13.5
dB
VO
output voltage
dim = 60 dB; IC = 120 mA; VCE =18V;
RL =75 ; fp +fq fr = 793.25 MHz;
Tamb =25 °C
1.2
V
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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