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參數(shù)資料
| 型號(hào)： | 933930010112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 14/16頁(yè) |
| 文件大小： | 121K |
| 代理商： | 933930010112 |
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September 1992
7
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF177
Fig.11 Third order intermodulation distortion as a
function of load power, typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 ;f1 = 28.000 MHz; f2 = 28.001 MHz.
handbook, halfpage
0
20
40
30
50
60
100
200
MGP097
d3
(dB)
PL (W) PEP
Fig.12 Fifth order intermodulation distortion as a
function of load power, typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 ;f1 = 28.000 MHz; f2 = 28.001 MHz.
handbook, halfpage
0
20
40
30
50
60
100
200
MGP098
d5
(dB)
PL (W) PEP
Fig.13 Test circuit for class-AB operation.
f = 28 MHz.
handbook, full pagewidth
MGP095
input
50
C1
C5
C6
C8
L1
L2
D.U.T.
L3
L6
L4
R2
R1
R3
R4
C4
C2
+VG
C3
C13
C10
C9
C11
C12
C15
+VD
C14
L5
R5
C7
output
50
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