參數(shù)資料
型號: 933930000112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 9/12頁
文件大?。?/td> 78K
代理商: 933930000112
2001 May 23
6
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF147
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 9.8 ; unless otherwise specied.
RF performance in SSB operation in a common source class-AB circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
Notes
1. Optimum load impedance: 2.1 + j0
.
2. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
PL
(W)
f
(MHz)
VDS
(V)
IDQ
(A)
Gp
(dB)
ηD
(%)
d3
(dB)
(note 2)
d5
(dB)
(note 2)
20 to 150 (PEP)
28
1
> 17
typ. 19
> 35
typ. 40
<30
typ.
34
<30
typ.
40
Ruggedness in class-AB operation
The BLF147 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 28 V; f = 28 MHz at rated load power.
Fig.9
Gain as a function of load power, typical
values.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
handbook, halfpage
0
200
30
10
MGP053
20
100
PL (W) PEP
Gp
(dB)
Fig.10 Efficiency as a function of load power,
typical values.
Class-AB operation; VDS = 28 V; IDQ = 1 A;
RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
handbook, halfpage
0
60
40
20
0
100
200
MGP054
ηD
(%)
PL (W) PEP
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