參數(shù)資料
型號(hào)： 933919940115
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SC-73, 4 PIN
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 107K
代理商： 933919940115
1995 Sep 13
2
Philips Semiconductors
Product specication
NPN 7GHz wideband transistor
BFG135
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
age
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
150
mA
Ptot
total power dissipation
up to Ts = 145 °C (note 1)
1W
hFE
DC current gain
IC = 100 mA; VCE = 10 V; Tj =25 °C
80
130
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 1 GHz;
Tamb =25 °C
7
GHz
GUM
maximum unilateral power
gain
IC = 100 mA; VCE = 10 V; f = 500 MHz;
Tamb =25 °C
16
dB
IC = 100 mA; VCE = 10 V; f = 800 MHz;
Tamb =25 °C
12
dB
Vo
output voltage
dim = 60 dB; IC = 100 mA; VCE =10V;
RL =75 ; Tamb =25 °C;
f(p+qr) = 793.25 MHz
850
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
2V
IC
DC collector current
150
mA
Ptot
total power dissipation
up to Ts = 145 °C (note 1)
1W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
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