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參數(shù)資料
| 型號： | 933917350115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 19/19頁 |
| 文件大?。?/td> | 488K |
| 代理商： | 933917350115 |
BC640_BCP53_BCX53_8
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 08 — 22 February 2008
9 of 15
NXP Semiconductors
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
7.
Characteristics
[1]
Pulse test: tp ≤ 300 s; δ = 0.02.
FR4 PCB, mounting pad for collector 6 cm2
Fig 9.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa818
10
1
102
103
Zth(j-a)
(K/W)
101
105
10
102
104
102
101
tp (s)
103
103
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
Table 8.
Characteristics
Tamb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 30 V; IE =0A
-
100
nA
VCB = 30 V; IE =0A;
Tj = 150 °C
--
10
A
IEBO
emitter-base cut-off
current
VEB = 5 V; IC =0A
-
100
nA
hFE
DC current gain
VCE = 2V
IC = 5mA
63
-
IC = 150 mA
63
-
250
IC = 500 mA
[1] 40
-
DC current gain
VCE = 2V
hFE selection -10
IC = 150 mA
63
-
160
hFE selection -16
IC = 150 mA
100
-
250
VCEsat
collector-emitter
saturation voltage
IC = 500 mA;
IB = 50 mA
[1] --
0.5
V
VBE
base-emitter voltage
1V
Cc
collector capacitance
VCB = 15 V; IE =ie =0A;
f=1MHz
-15
-
pF
fT
transition frequency
VCE = 5 V; IC = 50 mA;
f = 100 MHz
-
145
-
MHz
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