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參數(shù)資料
| 型號(hào)： | 933897220115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, UPAK-3 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | 933897220115 |
September 1995
3
Philips Semiconductors
Product specication
PNP 5 GHz wideband transistor
BFQ149
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 135 °C (note 1)
40 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V;
100
nA
hFE
DC current gain
IC = 70 mA; VCE = 10 V
20
50
fT
transition frequency
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
45
GHz
Cc
collector capacitance
IE = 0; VCB = 10 V; f = 1 MHz
2
pF
Ce
emitter capacitance
IC = 0; VEB = 0.5 V; f = 1 MHz
4
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
1.7
pF
GUM
maximum unilateral power gain
(note 1)
IC = 50 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
12
dB
F
noise gure
IC = 50 mA; VCE = 10 V;
Rs = 60 ; f = 500 MHz;
Tamb = 25 °C
3.75
dB
G
UM
10
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
log
=
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