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| 型號： | 933864370215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 933864370215 |
2003 Mar 18
4
Philips Semiconductors
Product specication
PNP switching transistor
MMBT3906
handbook, halfpage
0
400
600
200
MHC459
101
1
10
IC (mA)
hFE
102
103
(1)
(3)
(2)
Fig.2 DC current gain; typical values.
VCE = 1V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
10
250
0
50
100
150
200
2
VCE (V)
IC
(mA)
4
6
8
MHC460
(1)
(2)
(3)
(9)
(7)
(10)
(8)
(6)
(5)
(4)
Fig.3
Collector current as a function of
collector-emitter voltage.
(1) IB = 1.5 mA.
(2) IB = 1.35 mA.
(3) IB = 1.2 mA.
(4) IB = 1.05 mA.
(5) IB = 0.9 mA.
(6) IB = 0.75 mA.
(7) IB = 0.6 mA.
(8) IB = 0.45 mA.
(9) IB = 0.3 mA.
(10) IB = 0.15 mA.
Tamb =25 °C.
handbook, halfpage
200
1200
400
600
800
1000
MHC461
1
101
IC (mA)
VBE
(mV)
10
102
103
(3)
(2)
(1)
Fig.4
Base-emitter voltage as a function of
collector current.
VCE = 1V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
200
1200
400
600
800
1000
MHC462
1
101
IC (mA)
VBEsat
(mV)
10
102
103
(1)
(3)
(2)
Fig.5
Base-emitter saturation voltage as a
function of collector current.
IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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