參數(shù)資料
型號： 933834420115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, MPT3, UPAK-3
文件頁數(shù)： 3/8頁
文件大小： 42K
代理商： 933834420115
1999 Apr 14
3
Philips Semiconductors
Product specication
NPN Darlington transistor
PXTA14
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
96
K/W
Rth j-s
thermal resistance from junction to solder point
16
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =30V
100
nA
ICES
collector cut-off current
VBE = 0; VCE =30V
100
nA
IEBO
emitter cut-off current
IC = 0; VEB =10V
100
nA
hFE
DC current gain
IC = 10 mA; VCE = 5 V; (see Fig.2)
10000
IC = 100 mA; VCE = 5 V; (see Fig.2)
20000
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEon
base-emitter on-state voltage
IC = 100 mA; VCE =5V
2V
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 100 MHz
125
MHz
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