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| 型號(hào)： | 933793560112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | 933793560112 |
2001 Nov 27
2
Philips Semiconductors
Product specication
550 MHz, 22 dB gain push-pull amplier
BGY587
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
TiPtAu metallized crystals ensure optimal reliability.
APPLICATIONS
CATV systems operating in the 40 to 550 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC). The BGY587 is
intended for use as a final amplifier.
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5+VB
7, 8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
21.5
22.5
dB
f = 550 MHz
22
dB
Itot
total current consumption (DC)
VB =24V
220
240
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
65
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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