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參數(shù)資料
| 型號(hào)： | 933793520112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 933793520112 |
2001 Oct 18
2
Philips Semiconductors
Product specication
550 MHz, 18.2 dB gain push-pull amplier
BGY585A
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Optimal reliability ensured by
TiPtAu metallized crystals.
DESCRIPTION
Hybrid amplifier module for CATV
systems operating over a frequency
range of 40 to 550 MHz at a voltage
supply of 24 V (DC). Intended for use
as a final amplifier.
PINNING - SOT115J
PIN CONFIGURATION
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
Fig.1 Simplified outline.
fpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
17.7
18.7
dB
f = 550 MHz
18.8
20
dB
Itot
total current consumption (DC)
VB =24V
220
240
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
65
dBmV
Tstg
storage temperature
40
+100
°C
Tcase
case operating temperature
20
+100
°C
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