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參數(shù)資料
| 型號： | 933789440127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 9 A, 650 V, SCR |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 71K |
| 代理商： | 933789440127 |
Philips Semiconductors
Product specification
Thyristors
BT151F series
Fig.7. Normalised gate trigger current
I
GT(Tj)/ IGT(25C), versus junction temperature Tj.
Fig.8. Normalised latching current I
L(Tj)/ IL(25C),
versus junction temperature T
j.
Fig.9. Normalised holding current I
H(Tj)/ IH(25C),
versus junction temperature T
j.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-hs, versus
pulse width t
p.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D/dt versus junction temperature Tj.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
0
5
10
15
20
25
30
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.06 V
Rs = 0.0304 ohms
typ
max
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT145
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
tp / s
Zth j-hs (K/W)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
t
p
P
t
D
without heatsink compound
with heatsink compound
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
RGK = 100 Ohms
June 1999
4
Rev 1.200
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