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參數(shù)資料
| 型號： | 933783030114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 108K |
| 代理商： | 933783030114 |
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RX1214B300Y
Information as of 2000-08-28
RX1214B300Y; NPN microwave power transistor
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with the base connected to the
flange.
l
Interdigitated structure provides high emitter efficiency
l
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
l
Gold metallization realizes very stable characteristics and excellent lifetime
l
Multicell geometry improves power sharing and reduces thermal resistance
l
Internal input and output matching networks for an easy circuit design.
l
Common base class-C wideband amplifiers operating under pulsed conditions, recommended for L-band radar applications.
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