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參數(shù)資料
| 型號： | 933779670235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 133K |
| 代理商： | 933779670235 |
1998 Oct 02
3
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
collector current (DC)
50
mA
Ptot
total power dissipation
Ts ≤ 65 °C; see Fig.3; note 1
380
mW
Tstg
storage temperature range
65
150
°C
Tj
junction temperature
175
°C
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MBC984 - 1
150
P
tot
(mW)
T
s
(o C)
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
290
K/W
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