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參數資料
| 型號： | 933763990115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, UPAK-3 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 933763990115 |
1999 Apr 14
2
Philips Semiconductors
Product specication
PNP switching transistor
PXT3906
FEATURES
Low current (max. 100 mA)
Low voltage (max. 40 V).
APPLICATIONS
High-speed saturated switching applications.
DESCRIPTION
PNP switching transistor in a SOT89 plastic package.
NPN complement: PXT3904.
MARKING
TYPE NUMBER
MARKING CODE
PXT3906
p2A
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
123
Bottom view
MAM297
3
2
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.2
W
Tstg
storage temperature
55
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
55
+150
°C
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