參數(shù)資料
型號: 933754970215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: MICRO MINIATURE, PLASTIC, SMD, 4 PIN
文件頁數(shù): 4/5頁
文件大?。?/td> 41K
代理商: 933754970215
July 1993
4
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF994S
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied.
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS =15V; VG2-S =4V; Tamb =25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IG1-SS
gate 1 cut-off currents
VG1-S = ±5 V; VG2-S =VDS =0
±50
nA
IG2-SS
gate 2 cut-off currents
VG2-S = ±5 V; VG1-S =VDS =0
±50
nA
V(BR)G1-SS
gate 1-source breakdown voltage IG1-SS = ±10 mA; VG2-S =VDS =0
±6
±20
V
V(BR)G2-SS
gate 2-source breakdown voltage IG2-SS = ±10 mA; VG1-S =VDS =0
±6
±20
V
IDSS
drain-source cut-off voltage
VDS =15V; VG1-S = 0; VG2-S =4V
4
20
mA
V(P)G1-S
gate 1-source cut-off voltage
ID =20 A; VDS = 15 V; VG2-S =4V
2.5
V
V(P)G2-S
gate 2-source cut-off voltage
ID =20 A; VDS = 15 V; VG1-S =0
2V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
transfer admittance
f = 1 kHz
15
18
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.5
3
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1.2
pF
Crs
feedback capacitance
f = 1 MHz
25
fF
Cos
output capacitance
f = 1 MHz
1
pF
F
noise gure
f = 200 MHz; GS = 2 mS; BS =BSopt
1
dB
Gp
power gain
f = 200 MHz; GS = 2 mS; BS =BSopt;
GL = 0.5 mS; BL =BLopt
25
dB
Y
fs
相關(guān)PDF資料
PDF描述
933754980215 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
933755380114 L BAND, Si, NPN, RF POWER TRANSISTOR
0560-6600-12 HDSL & MDSL MAGNETICS For Level One
0560-6600-13 HDSL & MDSL MAGNETICS For Level One
0560-6600-15 HDSL & MDSL MAGNETICS For Level One
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
93378-003 制造商:FCI 功能描述:MEMORY CARD RECEPTACLE - Bulk
9337-A17R 制造商:GC Electronics 功能描述:
9337C 制造商:Hubbell Premise Wiring 功能描述:
9337-CHR-100 制造商:Belden Inc 功能描述:
9337CKE100M 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:380W GaN WIDEBAND PULSED