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參數(shù)資料
| 型號： | 933713850652 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 總線收發(fā)器 |
| 英文描述： | HCT SERIES, OCTAL 1-BIT DRIVER, INVERTED OUTPUT, PDSO20 |
| 封裝： | PLASTIC, SO-20 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 61K |
| 代理商： | 933713850652 |
Philips Semiconductors
PSMN006-20K
TrenchMOS ultra low level FET
Product data
Rev. 01 — 30 May 2002
2 of 12
9397 750 09631
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 150 °C
-
20
V
ID
drain current (DC)
Tsp =25 °C; VGS = 4.5 V
-
32
A
Ptot
total power dissipation
Tsp =25 °C
-
8.3
W
Tj
junction temperature
-
150
°C
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 5 A; Tj =25 °C
4.2
5
m
VGS = 2.5 V; ID = 5 A; Tj =25 °C
4.8
5.7
m
VGS = 1.8 V; ID = 5 A; Tj =25 °C
5.7
8.2
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj ≤ 150 °C
-
20
V
ID
drain current (DC)
-32
A
VGS
gate-source voltage
-
±10
V
IDM
peak drain current
-60
A
Ptot
total power dissipation
-
8.3
W
Tstg
storage temperature
-
150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
-
7.5
A
ISM
peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 s
-
30
A
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