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參數(shù)資料
| 型號(hào)： | 933698460112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PSIP4 |
| 封裝： | PLASTIC, SOT-195, FP-4 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 933698460112 |
1998 Mar 24
4
Philips Semiconductors
Product specication
Magnetic eld sensor
KMZ10A
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb =25 °C; Hx = 0.5 kA/m; notes 1 and 2; VCC = 5 V unless otherwise specied.
Notes
1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an
auxiliary field Hx = 3 kA/m.
2. No disturbing field (Hd) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
decrease of sensitivity.
3.
.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
180
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Hy
magnetic eld strength
note 2
0.5
+0.5
kA/m
S
sensitivity
notes 2 and 3
13
19
TCVO
temperature coefcient of
output voltage
VCC =5V;
Tamb = 25 to +125 °C
0.4
%/K
ICC = 3 mA;
Tamb = 25 to +125 °C
0.15
%/K
Rbridge
bridge resistance
0.8
1.6
k
TCRbridge
temperature coefcient of
bridge resistance
Tbridge = 25 to +125 °C
0.25
%/K
Voffset
offset voltage
1.5
+1.5
mV/V
TCVoffset
offset voltage drift
Tbridge = 25 to +125 °C
6
+6
FL
linearity deviation of output
voltage
Hy =0to ±0.25 kA/m
0.8
%
FS
Hy =0to ±0.4 kA/m
2.5
%
FS
Hy =0to ±0.5 kA/m
4.0
%
FS
FH
hysteresis of output voltage
0.5
%
FS
f
operating frequency
0
1
MHz
mV V
kA m
-----------------
VV
K
---------------
S
V
O at Hy
0.4 kA m
=
()
V
O at Hy
0
=
()
–
0.4
V
CC
×
----------------------------------------------------------------------------------------------------------------
=
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