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參數(shù)資料
| 型號： | 933678780115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, MPT3, SMD, UPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 933678780115 |
1999 Apr 08
3
Philips Semiconductors
Product specication
PNP medium power transistor
BC869
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
93
K/W
Rth j-s
thermal resistance from junction to soldering point
13
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 25 V
100 nA
IE = 0; VCB = 25 V; Tj = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100 nA
hFE
DC current gain
IC = 5 mA; VCE = 10 V; see Fig.2
50
IC = 500 mA; VCE = 1 V; see Fig.2
100
375
IC = 1 A; VCE = 1 V; see Fig.2
60
DC current gain
IC = 500 mA; VCE = 1 V; see Fig.2
BC869-16
100
250
BC869-25
160
375
VCEsat
collector-emitter saturation
voltage
IC = 1 A; IB = 100 mA
500 mV
VBE
base-emitter voltage
IC = 5 mA; VCE = 10 V
620
mV
IC = 1 A; VCE = 1V
1V
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 40
MHz
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