參數(shù)資料
型號(hào): 933674720115
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 1 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-243AA
封裝: PLASTIC, MPT3, SMD, SC-62, UPAK-3
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 46K
代理商: 933674720115
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3106-D
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input.
Limits are for -40C
≤ T
mb ≤ 150C; typicals are for Tmb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
Input threshold voltage
V
DS = 5 V; ID = 1 mA
0.6
-
2.4
V
T
mb = 25C
1.1
1.6
2.1
V
I
IS
Input supply current
normal operation;
V
IS = 5 V
100
220
400
A
V
IS = 4 V
80
195
330
A
I
ISL
Input supply current
protection latched;
V
IS = 5 V
200
400
650
A
V
IS = 3 V
130
250
430
A
V
ISR
Protection reset voltage
1
reset time t
r ≥ 100 s
1.5
2
2.9
V
t
lr
Latch reset time
V
IS1 = 5 V, VIS2 < 1 V
10
40
100
s
V
(CL)IS
Input clamping voltage
I
I = 1.5 mA
5.5
-
8.5
V
R
IG
Input series resistance
2
T
mb = 25C
-
33
-
k
to gate of power MOSFET
SWITCHING CHARACTERISTICS
T
mb = 25 C; VDD = 13 V; resistive load RL = 4 .
Refer to waveform figure and test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
Turn-on delay time
V
IS = 5 V
-
10
20
s
t
r
Rise time
-
20
40
s
t
d off
Turn-off delay time
V
IS = 0 V
-
30
60
s
t
f
Fall time
-
20
40
s
1 The input voltage below which the overload protection circuits will be reset.
2 Not directly measureable from device terminals.
October 2001
4
Rev 1.000
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