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參數(shù)資料
| 型號(hào)： | 933669940652 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 算術(shù)邏輯單元 |
| 英文描述： | HCT SERIES, 9-BIT ENCODER, PDIP16 |
| 封裝： | PLASTIC, DIP-16 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 933669940652 |
Philips Semiconductors
PHD95N03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 8 February 2002
3 of 12
9397 750 09286
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
oC)
(%)
Pder
03ae86
0
40
80
120
0
50
100
150
200
Tmb (C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ae87
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 s
100 s
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