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參數(shù)資料
| 型號： | 933665440127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 97K |
| 代理商： | 933665440127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF630, IRF630S
Fig.7. Typical transfer characteristics.
I
D = f(VGS)
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)/RDS(ON)25 C = f(Tj)
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction Temperature, Tj (C)
typical
maximum
minimum
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
012
34567
89
10
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
minimum
typical
maximum
Normalised On-state Resistance
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction temperature, Tj (C)
10
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
August 1999
5
Rev 1.100
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