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參數(shù)資料
| 型號(hào)： | 933665120185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 933665120185 |
1999 Apr 15
2
Philips Semiconductors
Product specication
NPN high-voltage transistors
BF820; BF822
FEATURES
Low current (max. 50 mA)
High voltage (max. 300 V).
APPLICATIONS
Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BF821; BF823.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BF820
1V
BF822
1X
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BF820
300
V
BF822
250
V
VCEO
collector-emitter voltage
open base
BF820
300
V
BF822
250
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
50
mA
ICM
peak collector current
100
mA
IBM
peak base current
50
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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