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參數(shù)資料
| 型號： | 933642000215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 933642000215 |
April 1991
4
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF991
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied.
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS =10V; VG2-S =4V; Tamb =25 °C.
Note
1. Crystal mounted in a SOT103 package.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IG1-SS
gate 1 cut-off current
VG1-S =5V; VG2-S =VDS =0
50
nA
IG2-SS
gate 2 cut-off current
VG2-S =5V; VG1-S =VDS =0
50
nA
IDSS
drain current
VDS =10V; VG1-S = 0; VG2-S =4V
4
25
mA
V(BR)G1-SS
gate 1-source breakdown voltage IG1-SS = 10 mA; VG2-S =VDS =0
6
20
V
V(BR)G2-SS
gate 2-source breakdown voltage IG2-SS = 10 mA; VG1-S =VDS =0
6
20
V
V(P)G1-S
gate 1-source cut-off voltage
ID =20 A; VDS = 10 V; VG2-S =4V
2.5
V
V(P)G2-S
gate 2-source cut-off voltage
ID =20 A; VDS = 10 V; VG1-S =0
2.5
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
transfer admittance
f = 1 kHz
10
14
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.1
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1
pF
Crs
feedback capacitance
f = 1 MHz
20
fF
Cos
output capacitance
f = 1 MHz
1.1
pF
F
noise gure
f = 100 MHz; GS = 1 mS; BS =BSopt
0.7
1.7
dB
f = 200 MHz; GS = 2 mS; BS =BSopt
12dB
Gtr
transducer gain; note 1
f = 100 MHz; GS = 1 mS; BS =BSopt;
GL = 0.5 mS; BL =BLopt
29
dB
f = 200 MHz; GS = 2 mS; BS =BSopt;
GL = 0.5 mS; BL =BLopt
26
dB
Y
fs
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