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參數(shù)資料
| 型號(hào)： | 933589820185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 46K |
| 代理商： | 933589820185 |
1999 May 28
2
Philips Semiconductors
Product specication
PNP general purpose transistors
BC859; BC860
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
BC859B
4B
BC860B
4F
BC859C
4C
BC860C
4G
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC859
30
V
BC860
50
V
VCEO
collector-emitter voltage
open base
BC859
30
V
BC860
45
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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