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參數(shù)資料
| 型號： | 933589690235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 46K |
| 代理商： | 933589690235 |
1999 Apr 08
3
Philips Semiconductors
Product specication
NPN general purpose transistors
BC849; BC850
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =30V
15
nA
IE = 0; VCB =30V; Tj = 150 °C
5
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC =10 A; VCE =5V;
see Figs 2 and 3
BC849B; BC850B
240
BC849C; BC850C
450
DC current gain
IC = 2 mA; VCE =5V;
see Figs 2 and 3
BC849B; BC850B
200
290
450
BC849C; BC850C
420
520
800
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
90
250
mV
IC = 100 mA; IB =5mA
200
600
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA; note 1
700
mV
IC = 100 mA; IB = 5 mA; note 1
900
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V; note 2
580
660
700
mV
IC = 10 mA; VCE = 5 V; note 2
770
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
11
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz
F
noise gure
IC = 200 A; VCE =5V; RS =2k;
f = 10 Hz to 15.7 kHz
4dB
IC = 200 A; VCE =5V; RS =2k;
f = 1 kHz; B = 200 Hz
4dB
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