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參數(shù)資料
| 型號(hào)： | 933589630235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | 933589630235 |
2002 Feb 04
3
Philips Semiconductors
Product specication
NPN general purpose transistors
BC846; BC847; BC848
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC846
80
V
BC847
50
V
BC848
30
V
VCEO
collector-emitter voltage
open base
BC846
65
V
BC847
45
V
BC848
30
V
VEBO
emitter-base voltage
open collector
BC846; BC847
6V
BC848
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
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