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參數(shù)資料
| 型號： | 933526230215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 限壓二極管 |
| 英文描述： | SILICON, STABISTOR DIODE |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 42K |
| 代理商： | 933526230215 |
1999 May 31
2
Philips Semiconductors
Product specication
Low-voltage stabistor
BAS17
FEATURES
Low-voltage stabilization
Forward voltage range:
580 to 960 mV
Total power dissipation:
max. 250 mW.
APPLICATIONS
Low-voltage stabilization e.g.
– Bias stabilizer in class-B output
stages
– Clipping
– Clamping
– Meter protection.
DESCRIPTION
Low-voltage stabilization diode in a
small SOT23 plastic package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
Marking code: A91.
handbook, halfpage
21
3
MAM185
2
n.c.
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
5V
IF
continuous forward current
200
mA
Ptot
total power dissipation
Tamb =25 °C
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
see Fig.2
IF = 0.1 mA
580
660
mV
IF = 1 mA
665
745
mV
IF = 5 mA
725
805
mV
IF = 10 mA
750
830
mV
IF = 100 mA
870
960
mV
IR
reverse current
VR =4V
5
A
rdif
differential resistance
IF = 0.5 mA
120
IF =2mA
80
SF
temperature coefcient
IF =1mA
1.8
mV/K
Cd
diode capacitance
VR =0V; f=1MHz
140
pF
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