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參數(shù)資料
| 型號(hào)： | 933508400215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 45K |
| 代理商： | 933508400215 |
1999 Apr 15
3
Philips Semiconductors
Product specication
PNP switching transistors
BSR15; BSR16
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
BSR15
IE = 0; VCB = 50 V
20
nA
IE = 0; VCB = 50 V; Tj = 150 °C
20
A
collector cut-off current
BSR16
IE = 0; VCB = 50 V
10
nA
IE = 0; VCB = 50 V; Tj = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
50
nA
hFE
DC current gain
IC = 0.1 mA; VCE = 10 V
BSR15
35
BSR16
75
DC current gain
IC = 1 mA; VCE = 10 V
BSR15
50
BSR16
100
DC current gain
IC = 10 mA; VCE = 10 V
BSR15
75
BSR16
100
DC current gain
IC = 150 mA; VCE = 10 V; note 1
100
300
DC current gain
IC = 500 mA; VCE = 10 V; note 1
BSR15
30
BSR16
50
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 15 mA
400
mV
IC = 500 mA; IB = 50 mA
1.6
V
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA
1.3
V
IC = 500 mA; IB = 50 mA
2.6
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
8pF
Ce
emitter capacitance
IC =ic = 0; VEB = 2 V; f = 1 MHz
30
pF
fT
transition frequency
IC = 50 mA; VCE = 20 V; f = 100 MHz 200
MHz
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