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參數(shù)資料
| 型號： | 933507970652 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 諧振器 |
| 英文描述： | 4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, PDSO16 |
| 封裝： | PLASTIC, SOT-109-1, SO-16 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 100K |
| 代理商： | 933507970652 |
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3106-D
OUTPUT CHARACTERISTICS
Limits are for -40C
≤ T
mb ≤ 150C; typicals are for Tmb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS = 0 V
V
(CL)DSS
Drain-source clamping voltage
I
D = 10 mA
50
-
V
I
DM = 1 A; tp ≤ 300 s; δ ≤ 0.01
50
60
70
V
I
DSS
Drain source leakage current
V
DS = 40 V
-
100
A
T
mb = 25 C
-
0.1
10
A
On-state
I
DM = 3 A; tp ≤ 300 s; δ ≤ 0.01
R
DS(ON)
Drain-source resistance
V
IS ≥ 4.4 V
-
190
m
T
mb = 25 C
-
68
100
m
V
IS ≥ 4 V
-
200
m
T
mb = 25 C
-
72
105
m
OVERLOAD CHARACTERISTICS
-40C
≤ T
mb ≤ 150C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Short circuit load
V
DS = 13 V
I
D
Drain current limiting
V
IS = 5 V;
T
mb = 25C
8
12
16
A
4.4 V
≤ V
IS ≤ 5.5 V
6
-
18
A
4 V
≤ V
IS ≤ 5.5 V
5
-
18
A
Overload protection
V
IS = 5 V;
T
mb = 25C
P
D(TO)
Overload power threshold
device trips if P
D > PD(TO)
20
55
80
W
T
DSC
Characteristic time
which determines trip time
1
200
350
600
s
Overtemperature protection
T
j(TO)
Threshold junction
150
170
-
C
temperature
2
1 Trip time t
d sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO) ].
2 This is independent of the dV/dt of input voltage V
IS.
October 2001
3
Rev 1.000
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