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參數(shù)資料
| 型號(hào)： | 933495320215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | 933495320215 |
1999 Apr 15
3
Philips Semiconductors
Product specication
PNP general purpose transistor
BCW89
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 20 V
100 nA
IE = 0; VCB = 20 V; Tj = 100 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100 nA
hFE
DC current gain
IC = 10 A; VCE = 5V
90
IC = 2 mA; VCE = 5 V
120
260
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
80
300 mV
IC = 50 mA; IB = 2.5 mA
150
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
720
mV
IC = 50 mA; IB = 2.5 mA
810
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5V
600 750 mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
4.5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
150
MHz
F
noise gure
IC = 200 A; VCE = 5 V; RS =2k;
f = 1 kHz; B = 200 Hz
10
dB
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