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參數(shù)資料
| 型號(hào)： | 933483680215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 933483680215 |
1999 Apr 20
3
Philips Semiconductors
Product specication
PNP general purpose transistors
BCX71 series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 45 V
20
nA
IE = 0; VCB = 45 V; Tamb = 150 °C
20
A
IEBO
emitter cut-off current
IC = 0; VEB = 4V
20
nA
hFE
DC current gain
IC = 10 A; VCE = 5V
BCX71G
BCX71H
30
BCX71J
40
BCX71K
100
DC current gain
IC = 2 mA; VCE = 5V
BCX71G
120
220
BCX71H
180
310
BCX71J
250
460
BCX71K
380
630
DC current gain
IC = 50 mA; VCE = 1 V; note 1
BCX71G
60
BCX71H
80
BCX71J
100
BCX71K
110
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.25 mA
60
250
mV
IC = 50 mA; IB = 1.25 mA; note 1
120
550
mV
VBEsat
base-emitter saturation
voltage
IC = 10 mA; IB = 0.25 mA
600
850
mV
IC = 50 mA; IB = 1.25 mA; note 1
680
1050 mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5V
600
650
750
mV
IC = 10 A; VCE = 5V
550
mV
IC = 50 mA; VCE = 1 V; note 1
720
mV
Cc
collector capacitance
IE =Ie = 0; VCB = 10 V; f = 1 MHz
4.5
pF
Ce
emitter capacitance
IC =Ic = 0; VEB = 0.5 V; f = 1 MHz
11
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
MHz
F
noise gure
IC = 200 A; VCE = 5 V; RS =2k;
f = 1 kHz; B = 200 Hz
26dB
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