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參數(shù)資料
| 型號(hào)： | 933476670215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | 933476670215 |
1999 Apr 15
3
Philips Semiconductors
Product specication
NPN general purpose transistors
BCX70 series
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =45V
20
nA
IE = 0; VCB = 45 V; Tamb = 150 °C
20
A
IEBO
emitter cut-off current
IC = 0; VEB =4V
20
nA
hFE
DC current gain
IC =10 A; VCE =5V
BCX70G
BCX70H
40
BCX70J
30
BCX70K
100
DC current gain
IC = 2 mA; VCE =5V
BCX70G
120
220
BCX70H
180
310
BCX70J
250
460
BCX70K
380
630
DC current gain
IC = 50 mA; VCE =1V
BCX70G
50
BCX70H
70
BCX70J
90
BCX70K
100
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.25 mA
50
350
mV
IC = 50 mA; IB = 1.25 mA
100
550
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.25 mA
600
850
mV
IC = 50 mA; IB = 1.25 mA
700
1050
mV
VBE
base-emitter voltage
IC =10 A; VCE =5V
520
mV
IC = 2 mA; VCE = 5 V
550
650
750
mV
IC = 50 mA; VCE =1V
780
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
1.7
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
11
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz;
note 1
100
250
MHz
F
noise gure
IC = 200 A; VCE =5V; RS =2k;
f = 1 kHz; B = 200 Hz
26dB
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