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參數(shù)資料
| 型號： | 933448540112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大小： | 81K |
| 代理商： | 933448540112 |
August 1986
9
Philips Semiconductors
Product specication
UHF linear power transistor
BLW33
Fig.10 Bias circuit for class-A amplifier at
fvision = 860 MHz.
+Vs
+VCC
+VBB
0
R9
R8
R7
TR1
C3
R5
R4
C2
C1
R3
R2
D1
R1
D2
C4
R6
MGP437
List of components:
C1 = 100 pF ceramic capacitor
C2 = C3 = 100 nF polyester capacitor
C4 = 10
F/25 V solid aluminium electrolytic capacitor
R1 = 150
carbon resistor (0,25 W)
R2 = 100
preset potentiometer (0,1 W)
R3 = 82
carbon resistor (0,25 W)
R4 = R5 = 2,2 k
carbon resistor (0,25 W)
R6 = 6
; parallel connection of 2 × 12
carbon resistors (0,5 W each)
R7 = R8 = 820
carbon resistor (0,25 W)
R9 = 33
carbon resistor (0,25 W)
D1 = BZY88-C3V3
D2 = BY206
TR1 = BD136
Information for wideband application from 470 to 860 MHz available on request.
1. Three-tone test method (vision carrier
8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal
≤75 dB.
2. Two-tone test method (vision carrier 0 dB, sound carrier
7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to
20 dB.
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power.
Typical values; VCE = 25 V; IC = 300 mA; fvision = 860 MHz; Th =25 °C; Th =70 °C.
handbook, full pagewidth
4
50
65
01
3
MGP450
2
60
55
30
0
10
20
dim
(dB)
dcm
(%)
dim
dcm
Po sync (W)
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