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參數(shù)資料
| 型號(hào)： | 933410720215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | 933410720215 |
December 1997
3
Philips Semiconductors
Product specication
N-channel silicon FET
BFT46
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Mounted on a ceramic substrate of 8 mm
× 10 mm × 0,7 mm.
CHARACTERISTICS
Tj =25 °C unless otherwise specied
Drain-source voltage
±VDS
max.
25 V
Drain-gate voltage (open source)
VDGO
max.
25 V
Gate-source voltage (open drain)
V
GSO
max.
25 V
Drain current
ID
max.
10 mA
Gate current
IG
max.
5 mA
Total power dissipation up to Tamb =40 °C(1)
Ptot
max.
250 mW
Storage temperature range
Tstg
65 to +150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient(1)
Rth j-a
=
430 K/W
Gate cut-off current
V
GS = 10 V; VDS =0
IGSS
<
0,2 nA
Drain current
VDS = 10 V; VGS =0
IDSS
>
0,2 mA
<
1,5 mA
Gate-source voltage
ID =50 A; VDS = 10 V
V
GS
>
0,1 V
<
1,0 V
Gate-source cut-off voltage
ID = 0,5 nA; VDS =10V
V(P)GS
<
1,2 V
y-parameters at f = 1 kHz;
VDS = 10 V; VGS = 0; Tamb =25 °C
Transfer admittance
yfs >
1,0 mS
Output admittance
y
os <
10
S
VDS = 10 V; ID = 200 A; Tamb =25 °C
Transfer admittance
yfs >
0,5 mS
Output admittance
y
os <
5
S
Input capacitance at f = 1 MHz;
VDS = 10 V; VGS = 0; Tamb =25 °CCis
<
5pF
Feedback capacitance at f = 1 MHz;
VDS = 10 V; VGS = 0; Tamb =25 °CCrs
<
1,5 pF
Equivalent noise voltage
VDS = 10 V; ID = 200 A; Tamb =25 °C
B = 0,6 to 100 Hz
Vn
<
0,5
V
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