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參數(shù)資料
| 型號(hào)： | 933410700215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, UHF BAND, MIXER DIODE |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 933410700215 |
1999 May 26
3
Philips Semiconductors
Product specication
Schottky barrier diode
BAT17
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.2
IF = 0.1 mA
350
mV
IF =1mA
450
mV
IF =10mA
600
mV
IR
reverse current
VR = 3 V; see Fig.3
0.25
A
VR =3V; Tamb =60 °C; see Fig.3
1.25
A
rD
diode forward resistance
f = 1 kHz; IF = 5 mA
15
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.4
1pF
F
noise gure
f = 900 MHz; note 1
8dB
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
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