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參數(shù)資料
| 型號(hào)： | 933334180113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.4 A, 90 V, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS, SC-40, 2 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 933334180113 |
1996 Sep 17
4
Philips Semiconductors
Product specication
Controlled avalanche diode
BAX12
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
400
500
300
200
0
100
MBG455
Tamb (
oC)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG463
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) Tj = 175 °C; typical values.
(2) Tj =25 °C; typical values.
(3) Tj =25 °C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj =25 °C prior to surge.
handbook, full pagewidth
MBG702
10
tp (s)
1
IFSM
(A)
102
101
104
102
103
10
1
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