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參數(shù)資料
| 型號： | 933331500215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 933331500215 |
1999 Apr 15
3
Philips Semiconductors
Product specication
NPN high-voltage transistor
BSS64
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =90V
100
nA
IE = 0; VCB =90V; Tj = 150 °C
50
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
0.5
200
nA
hFE
DC current gain
IC = 1 mA; VCE =1V
60
IC = 10 mA; VCE = 1 V
20
80
IC = 20 mA; VCE =1V
55
VCEsat
collector-emitter saturation
voltage
IC = 4 mA; IB = 400 A
150
mV
IC = 50 mA; IB =15mA
200
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
3
pF
fT
transition frequency
IC = 4 mA; VCE = 10 V; f = 100 MHz 60
100
MHz
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