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參數(shù)資料
| 型號(hào)： | 933321030127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 16 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 933321030127 |
Philips Semiconductors
Product specification
Triacs
BT139 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
1.2
K/W
junction to mounting base
half cycle
-
1.7
K/W
R
th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT139-
...
...F
...G
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
10
35
25
50
mA
T2- G+
-
22
70
100
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
7
40
60
mA
T2+ G-
-
20
60
90
mA
T2- G-
-
8
40
60
mA
T2- G+
-
10
60
90
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
6
30
60
mA
V
T
On-state voltage
I
T = 20 A
-
1.2
1.6
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 C
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT139-
...
...F
...G
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);
100
50
200
250
-
V/
s
off-state voltage
T
j = 125 C; exponential
waveform; gate open
circuit
dV
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 95 C;
-
10
20
-
V/
s
commutating voltage
I
T(RMS) = 16 A;
dI
com/dt = 7.2 A/ms; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 20 A; VD = VDRM(max);-
-
2
-
s
time
I
G = 0.1 A; dIG/dt = 5 A/s
July 2001
2
Rev 1.400
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