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參數(shù)資料
| 型號(hào)： | 933282640652 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | 4000/14000/40000 SERIES, TRIPLE 3-INPUT NOR GATE, PDIP14 |
| 封裝： | PLASTIC, SOT-27-1, DIP-14 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 25K |
| 代理商： | 933282640652 |
Philips Semiconductors
BUK95/9640-100A
TrenchMOS logic level FET
Product data
Rev. 03 — 08 February 2002
2 of 14
9397 750 09162
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
100
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
39
A
Ptot
total power dissipation
Tmb =25 °C
-
158
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID = 25 A
34
40
m
Tj =25 °C; VGS = 4.5 V; ID =25A
-
43
m
Tj =25 °C; VGS = 10 V; ID = 25 A
29
39
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
100
V
VDGR
drain-gate voltage (DC)
RGS =20k
-
100
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
-39
A
-28
A
IDM
drain current (peak value)
Tmb =25 °C; pulsed; tp ≤ 10 s;
-
159
A
Ptot
total power dissipation
-
158
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current
Tmb =25 °C
-
39
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
159
A
Avalanche ruggedness
EDS(AL)S non-repetitive avalanche energy
unclamped inductive load; ID =39A;
VDS ≤ 100 V; VGS =5V; RGS =50 ;
starting Tmb =25 °C
-
182
mJ
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